Method for forming semiconductor structure

ABSTRACT

One or more techniques or systems for forming a semiconductor structure having a gap are provided herein. In some embodiments, a gap is formed between a first etch stop layer (ESL) and an ESL seal region. For example, the gap is formed by removing a portion of a low-k (LK) dielectric region above an oxide region and removing the oxide region. In some embodiments, the oxide region below the LK dielectric region facilitates removal of the LK dielectric region, at least because the oxide region enhances a bottom etch rate of a bottom of the LK dielectric region such that the bottom etch rate is similar to a wall etch rate of a wall of the LK dielectric region.

RELATED APPLICATION

This application is a divisional of U.S. Non-Provisional patentapplication Ser. No. 13/659,109, titled “DAMASCENE GAP STRUCTURE” andfiled on Oct. 24, 2012, which is incorporated herein by reference.

BACKGROUND

Generally, a traditional damascene gap structure is associated with agap, such as a gap in a dielectric region, for example. The gap isgenerally formed by etching a portion of the dielectric region. Howevera first etch rate, such as a bottom etch rate of a bottom of thedielectric region, is often different from a second etch rate, such as awall etch rate of a wall of the dielectric region. Therefore, the gap ofthe traditional damascene gap structure is often associated with anundesirable profile, at least because the different etch rates of thedielectric region result in residue dielectric within the gap, forexample.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the disclosure are understood from the following detaileddescription when read with the accompanying drawings. It will beappreciated that elements, structures, etc. of the drawings are notnecessarily drawn to scale. Accordingly, the dimensions of the same maybe arbitrarily increased or reduced for clarity of discussion, forexample.

FIG. 1 is a cross-sectional view of an example damascene gap structure,according to some embodiments.

FIG. 2 is a cross-sectional view of an example damascene gap structure,according to some embodiments.

FIG. 3A is a cross-sectional view of an example damascene gap structureduring formation, according to some embodiments.

FIG. 3B is a cross-sectional view of an example damascene gap structureduring formation, according to some embodiments.

FIG. 4A is a cross-sectional view of an example damascene gap structureduring formation, according to some embodiments.

FIG. 4B is a cross-sectional view of an example damascene gap structureduring formation, according to some embodiments.

FIG. 5A is a cross-sectional view of an example damascene gap structureduring formation, according to some embodiments.

FIG. 5B is a cross-sectional view of an example damascene gap structureduring formation, according to some embodiments.

FIG. 6A is a cross-sectional view of an example damascene gap structureduring formation, according to some embodiments.

FIG. 6B is a cross-sectional view of an example damascene gap structureduring formation, according to some embodiments.

FIG. 7A is a cross-sectional view of an example damascene gap structure,according to some embodiments.

FIG. 7B is a cross-sectional view of an example damascene gap structure,according to some embodiments.

FIG. 8A is a cross-sectional view of an example damascene gap structure,according to some embodiments.

FIG. 8B is a cross-sectional view of an example damascene gap structure,according to some embodiments.

FIG. 9 is a cross-sectional view of an example damascene gap structure,according to some embodiments.

FIG. 10 is a flow diagram of an example method for forming a damascenegap structure, according to some embodiments.

FIG. 11 is a flow diagram of an example method for forming a damascenegap structure, according to some embodiments.

DETAILED DESCRIPTION

The claimed subject matter is now described with reference to thedrawings, wherein like reference numerals are generally used to refer tolike elements throughout. In the following description, for purposes ofexplanation, numerous specific details are set forth in order to providea thorough understanding of the claimed subject matter. It is evident,however, that the claimed subject matter may be practiced without thesespecific details. In other instances, structures and devices areillustrated in block diagram form in order to facilitate describing theclaimed subject matter.

It will be appreciated that ‘layer’, as used herein, contemplates aregion, and does not necessarily comprise a uniform thickness. Forexample, a layer is a region, such as an area comprising arbitraryboundaries. For another example, a layer is a region comprising at leastsome variation in thickness.

FIG. 1 is a cross-sectional view of an example damascene gap structure100, according to some embodiments. In some embodiments, the damascenegap structure 100 of FIG. 1 comprises a first etch stop layer (ESL) 102.In some embodiments, an oxide region 104 is located above at least someof the first ESL 102. Additionally, a low-k (LK) dielectric region 106is located above the oxide region 104. In some embodiments, a second ESL108 is located above the LK dielectric region 106. For example, thesecond ESL 108 is a metal diffusion barrier. In some embodiments, thesecond ESL 108 is formed by deposition, for example. In someembodiments, a first ESL seal region 110A is located above the secondESL 108. Additionally, a second ESL seal region 110B is flush with thesecond ESL 108. In some embodiments, the second ESL seal region 110Bcomprises a different height than the second ESL 108, but the second ESLseal region 110B and the second ESL 108 are flush with respect to a topof the LK dielectric region 106. In some embodiments, at least a portionof the first ESL seal region 110A is located above at least a portion ofthe second ESL seal region 110B. For example, the first ESL seal region110A is connected to the second ESL seal region 110B. In someembodiments, an ESL seal region 110 is a continuous region and comprisesthe first ESL seal region 110A and the second ESL seal region 110B.

In some embodiments, the damascene gap structure 100 comprises a gap 130between the first ESL 102 and the second ESL seal region 110B. Forexample, the gap 130 of the damascene gap structure 100 is formed basedon removing LK dielectric material in gap 130. In some embodiments, theLK dielectric material in the gap 130 is located above an oxide regionwithin the gap (not shown). For example, the oxide region is not shownat least because the oxide region within the gap is removed during gap130 formation. Accordingly, this oxide region (not shown) associatedwith gap 130 facilitates removal of the LK dielectric material withingap 130, at least because the oxide region enhances etch ratesassociated with the LK dielectric material. For example, dielectricmaterial along a wall, such as a first metal line 122, is associatedwith a wall etch rate. Additionally, dielectric material along a bottomportion, such as along the first ESL 102, is associated with a bottometch rate. Typically, the wall etch rate is different from the bottometch rate. However, the oxide region within the gap (not shown) enablesthe bottom etch rate to be similar to the wall etch rate. For example,processed LK dielectric material is generally associated with a fasteretch rate, such as a processed etch rate, than non-processed LKdielectric material associated with a non-processed etch rate, thusmaking the processed LK dielectric material more easily removable thanthe non-processed LK dielectric material. For example, the wall etchrate is associated with the processed LK etch rate. Accordingly, theoxide region of the gap 130 mitigates LK dielectric residue associatedwith the gap 130, at least because the oxide region of the gap enablesthe bottom etch rate to be similar to the faster, processed LK etchrate. Accordingly, the oxide region within the gap (not shown) enablesLK dielectric material within a bottom portion of the gap (not shown) tobe removed at a faster rate, such as a rate similar to the wall etchrate of the LK dielectric material against a wall of the gap 130. Inthis way, LK dielectric material of the gap 130 is removed to form gap130 in an efficient manner.

In some embodiments, the damascene gap structure 100 comprises a firstmetal line 122 and a second metal line 124. For example, at least one ofthe first metal line 122 or the second metal line 124 is formed under atleast one of the second ESL 108 or the second ESL seal region 110B.Additionally, at least one of the first metal line 122 or the secondmetal line 124 is formed through the first ESL 102, for example. It willbe appreciated that the gap 130 of the damascene gap structure 100separates the LK dielectric region 106 into a first LK dielectric regionon one side of the gap 130 and a second LK dielectric region on anotherside of the gap 130. Similarly, the gap 130 separates the oxide region104 into a first oxide region on one side of the gap 130 and a secondoxide region on another side of the gap 130. However, it will beappreciated that the LK dielectric region 106 comprises the first LKdielectric region and the second LK dielectric region. Similarly, theoxide region 104 comprises the first oxide region and the second oxideregion. Therefore, it will be appreciated that a region or a layer isnot necessarily continuous or flush, for example. In some embodiments,at least one of the first metal line 122, the second metal line 124, orthe gap 130 forms a break in at least one of the first ESL 102, theoxide region 104, or the LK dielectric region 106. Similarly, the secondESL 108 is not continuous in some embodiments. Additionally, the ESLseal region 110 is not flush in some embodiments. For example, the ESLseal region 110 is not flush at least because the first ESL seal region110A is located above the second ESL seal region 110B.

In some embodiments, at least one of the first ESL 102 or the second ESL108 comprises a dielectric material. Additionally, a dielectric constantassociated with the LK dielectric region 106 is less than five in someembodiments. In some embodiments, at least one of the first metal line122 or the second metal line 124 comprises copper. In some embodiments,the gap 130 of the damascene gap structure 100 comprises an air gap. Forexample, the air gap is associated with a dielectric constant=1.Accordingly, the air gap of the damascene gap structure 100 facilitatesimproved RC performance with respect to a gap 130 associated with adielectric constant higher than 1, for example. However, gap materialsother than air are contemplated. In some embodiments, the first ESL 102is configured to provide support, such as physical or mechanicalsupport, for at least one of the first metal line 122 or the secondmetal line 124. For example, the first ESL 102 mitigates dislocation ofrespective metal lines 122 or 124.

FIG. 2 is a cross-sectional view of an example damascene gap structure200, according to some embodiments. In some embodiments, FIG. 2 issimilar to FIG. 1, except that the damascene gap structure 200 of FIG. 2comprises a third metal line 126. For example, the third metal line 126is formed under the second ESL seal region 110B and through the firstESL 102. In some embodiments, the third metal line 126 is configured toform a first gap 130A and a second gap 130B based on dividing the gap130, for example.

It will be appreciated that FIGS. 3-9 are cross-sectional views of anexample damascene gap structure during formation, according to someembodiments, and that respective figures are described with respect toone another. FIG. 3A is a cross-sectional view of an example damascenegap structure 300A during formation, according to some embodiments. Forexample, damascene gap structure 300A comprises one or more additionalregions 306. In some embodiments, at least some of the one or moreadditional regions 306 comprise at least one of an etch stop layer(ESL), a low-k (LK) dielectric region, an ESL seal region, an oxideregion, etc. In some embodiments, a first ESL 102 is formed above theone or more additional regions 306. For example, the first ESL 102comprises a dielectric material. Additionally, an oxide region 104 isformed above the first ESL 102. For example, the oxide region 104comprises oxide. Additionally, a LK dielectric region 106 is formedabove the oxide region 104, such that the oxide region 104 is betweenthe LK dielectric region 106 and the first ESL 102. In some embodiments,the LK dielectric region 106 comprises dielectric material. For example,the dielectric material of the LK dielectric region 106 is associatedwith a dielectric constant less than five. In some embodiments, a hardmask (HM) region 340 is formed over the LK dielectric region 106. Insome embodiments, at least one the HM region 340, the LK dielectricregion 106, the oxide region 104, the first ESL 102, or at least some ofthe one or more additional regions 306 are formed by deposition.

FIG. 3B is a cross-sectional view of an example damascene gap structure300B during formation, according to some embodiments. For example, thedamascene gap structure 300B is the damascene gap structure 300A of FIG.3A after etching is performed. In some embodiments, the etching forms afirst trench 322, a second trench 324, or a contact space 328. Forexample, at least one of the first trench 322 or the second trench 324is formed by etching at least a portion of at least one of the HM region340, the LK dielectric region 106, the oxide region 104, or the firstESL 102. For another example, the contact space 328 is formed by etchingat least a portion of at least one of the HM region 340, the LKdielectric region 106, the oxide region 104, the first ESL 102, or atleast some of the one or more additional regions 306. In someembodiments, a single damascene approach is used, and merely the firsttrench 322 and the second trench 324 are formed. Accordingly, it will beappreciated that when the single damascene approach is used, the contactspace 328 or via 128 is not present in FIGS. 3-9, for example. In otherembodiments, such as a dual damascene approach, the first trench 322,the second trench 324, and the contact space 328 are formed in aconcurrent fashion. In some embodiments, an ESL, such as a middle ESLfacilitates formation of the contact space 328, such that etchingassociated with contact space 328 stops at the middle ESL.

FIG. 4A is a cross-sectional view of an example damascene gap structure400A during formation, according to some embodiments. For example, thefirst trench 322, the second trench 324, and the contact space 328 ofFIG. 3B are filled with metal to form a first metal line 122, a secondmetal line 124, and a via 128, respectively. In some embodiments, atleast one of the first metal line 122, the second metal line 124, or thevia 128 comprise copper. FIG. 4B is a cross-sectional view of an exampledamascene gap structure 400B during formation, according to someembodiments. For example, the damascene gap structure 400B is thedamascene gap structure 400A of FIG. 4A after chemical-mechanicalplanarization (CMP). In some embodiments, the HM region 340 is removedbased on CMP. Additionally, at least a portion of at least one of thefirst metal line 122, the second metal line 124, or the via 128 isremoved based on CMP. For example, a portion of the first metal line 122above the LK dielectric region 106 is removed. Similarly, portions ofthe second metal line 124 or the via 128 above the LK dielectric region106 are removed via CMP.

FIG. 5A is a cross-sectional view of an example damascene gap structure500A during formation, according to some embodiments. For example, thedamascene gap structure 500A of FIG. 5 comprises a second ESL 108 formedover at least one of the LK dielectric region 106, the first metal line122, the second metal line 124, or the via 128. In some embodiments, thesecond ESL 108 acts as a metal diffusion barrier, thus mitigating metalfrom at least one of the first metal line 122, the second metal line124, or the via 128 from diffusing into other regions. FIG. 5B is across-sectional view of an example damascene gap structure 500B duringformation, according to some embodiments. In FIG. 5B, a photo resist(PR) region 502 is formed over the second ESL 108 formed in FIG. 5A.

FIG. 6A is a cross-sectional view of an example damascene gap structure600A during formation, according to some embodiments. For example, thePR region 502 is patterned, as illustrated at 610. In some embodiments,610 corresponds to an area where gap 130 of FIG. 7A will be formed, forexample. In some embodiments, the PR region 602 is patterned 610 basedon a mask. FIG. 6B is a cross-sectional view of an example damascene gapstructure 600B during formation, according to some embodiments. In FIG.6B, the patterned PR region 502 of FIG. 6A is removed, such as after thesecond ESL 108 is patterned 610. In some embodiments, a portion of thesecond ESL 108 is removed during patterning, such as a portionassociated with 610. In some embodiments, 610 is above at least some ofat least one of the first metal line 122 or the second metal line 124.Additionally, 610 is above a region where gap 130 is to be formed. Itwill be appreciated that in some embodiments, the oxide region 104facilitates removal of the LK dielectric region 106, such as LKdielectric material associated with 610. In some embodiments, the oxideregion 104 enables LK dielectric material along an interface of theoxide region 104 and the LK dielectric region 106 to comprise an etchrate similar to that of an etch rate of LK dielectric material along aninterface of the first metal line 122 and the LK dielectric region 106.For example, the etch rate for LK dielectric material along theinterface of the first metal line 122 and the LK dielectric region 106is a wall etch rate. Additionally, the etch rate for LK dielectricmaterial along the interface of the second metal line 124 and the LKdielectric region 106 is a wall etch rate. For another example, the etchrate for LK dielectric material along the interface of the oxide region104 and the LK dielectric region 106 is a bottom etch rate. In this way,the oxide region balances the bottom etch rate with the wall etch rate,thus enabling ‘cleaner’ LK dielectric material removal than when oxideregion 104 is not present, for example. In some example, the bottom etchrate is uniform with the wall etch rate. Therefore, the oxide region 104enhances LK dielectric material removal or etching efficiency, at leastbecause the oxide region 104 mitigates etching selectivity during LKdielectric material removal.

FIG. 7A is a cross-sectional view of an example damascene gap structure700A, according to some embodiments. For example, the LK dielectricmaterial associated with 610 of FIG. 6B is removed to form a gap 130.Additionally, oxide associated with 610 of FIG. 6B is removed to formthe gap 130. It will be appreciated that such oxide facilitates removalof the LK dielectric material associated with 610 of FIG. 6B. However,it will be appreciated that the oxide region 104 remains in otherportions of the damascene gap structure 700A of FIG. 7A. For example,oxide 704 of the oxide region 104 not associated with 610 of FIG. 6B isnot removed, and thus remains in the damascene gap structure 700A. FIG.7B is a cross-sectional view of an example damascene gap structure 700B,according to some embodiments. In some embodiments, an ESL seal region110 is formed over at least one of the second ESL 108, the first metalline 122, the second metal line 124, or the gap 130. For example, theESL seal region 110 is not flush, at least because a first portion ofthe ESL seal region 110 is formed over the second ESL 108 and a secondportion of the ESL seal region 110 is formed over at least one of thefirst metal line 122, the second metal line 124, or the gap 130.Accordingly, in some embodiments, the first portion of the ESL sealregion 110 is above the second portion of the ESL seal region 110. Insome embodiments, the first portion of the ESL seal region 110 iscontinuous with the second portion of the ESL seal region 110 or formedin a concurrent fashion.

FIG. 8A is a cross-sectional view of an example damascene gap structure800A, according to some embodiments. In some embodiments, a second setof one or more additional regions 806 is formed above the ESL sealregion 110. For example, the second set of one or more additionalregions 806 comprises at least one of an etch stop layer (ESL), a low-k(LK) dielectric region, an ESL seal region, an oxide region, etc.Additionally, the second set of one or more additional regions 806 isformed by deposition in some embodiments. FIG. 8B is a cross-sectionalview of an example damascene gap structure 800B, according to someembodiments. For example, contact space 328A is formed by removing atleast some of at least one of the second ESL 108, the ESL seal region110, or the second set of one or more additional regions 806. In thisway, via 128 is formed, such as by filling contact space 328A withmetal, for example.

FIG. 9 is a cross-sectional view of an example damascene gap structure900, according to some embodiments. For example, the damascene gapstructure 900 of FIG. 9 comprises two damascene gap structures, such asa first damascene gap structure and a second damascene gap structure. Insome embodiments, a first damascene gap structure is associated with atleast one of a first set of one or more additional regions 306, a firstESL 102, a first oxide region 104, a first LK dielectric region 106, asecond ESL 108, a first ESL seal region 110, a first metal line 122, asecond metal line 124, a first gap 130, or via 128. Additionally, asecond damascene gap structure is associated with at least one of asecond set of one or more additional regions 806, a third ESL 902, asecond oxide region 904, a second LK dielectric region 906, a fourth ESL908, a second ESL seal region 910, a third metal line 922, a fourthmetal line 924, a second gap 930, or via 128.

FIG. 10 is a flow diagram of an example method 1000 for forming adamascene gap structure, according to some embodiments. In someembodiments, the method 1000 comprises forming a first etch stop layer(ESL) at 1002. Additionally, the method 1000 comprises forming an oxideregion at 1004. For example, the oxide region is formed above the firstESL. At 1006, the method 1000 comprises forming a low-k (LK) dielectricregion. In some embodiments, the LK dielectric region is formed abovethe oxide region. At 1008, a first metal line or a second metal line isformed. According to some aspects, at least one of the first metal lineor the second metal line comprise copper. In some embodiments, at leastone of the first metal line or the second metal line is formed byperforming chemical-mechanical planarization (CMP) on at least one ofthe LK dielectric region, the first metal line, or the second metalline. In this way, excess metal associated with respective metal linesis removed. In some embodiments, at least one of the first metal line orthe second metal line runs through at least one of the first ESL, theoxide region, or the LK dielectric region. At 1010, a second ESL isformed. For example, the second ESL is formed over at least one of thefirst metal line, the second metal line, or the LK dielectric region. At1012, a portion of the second ESL is removed. For example, the portionof the second ESL removed is at least one of over at least one of thefirst metal line or the second metal line or between the first metalline and the second metal line. In some embodiments, the method 1000comprises removing at least a portion of the second ESL based on photoresist (PR) patterning. At 1014, a gap is formed within the damascenegap structure. For example, the gap is formed by removing at least oneof at least a portion of the oxide region between the first metal lineand the second metal line or at least a portion of the LK dielectricregion between the first metal line and the second metal line. At 1016,an ESL seal region is formed. In some embodiments, the ESL seal regionis formed over at least one of the second ESL, the first metal line, thesecond metal line, or the gap. In some embodiments, at least one of thefirst ESL or the second ESL comprises dielectric material. In otherembodiments, a third metal line is formed between the first metal lineand the second metal line. In this way, a first gap and a second gap areformed from the gap.

FIG. 11 is a flow diagram of an example method 1100 for forming adamascene gap structure, according to some embodiments. For example, themethod 1100 comprises forming a first etch stop layer (ESL) at 1102 andforming an oxide region at 1104. In some embodiments, the oxide regionis formed over or above the first ESL. At 1106, a low-k (LK) dielectricregion is formed. In some embodiments, the LK dielectric region isformed above the oxide region. At 1108, a hard mask (HM) region isformed. For example, the HM region is formed above the LK dielectricregion. Additionally, the HM region is patterned at 1108. At 1110, atleast one of a trench or contact space is etched. For example, themethod 1100 comprises etching at least one of a first trench, a secondtrench, or a contact space based on the patterned HM region. Accordingto some aspects, at least one of the first trench or the second trenchis formed through at least one of the first ESL, the oxide region, orthe LK dielectric region. According to some aspects, the contact spaceis formed through at least one of the first ESL, the oxide region, theLK dielectric region, or one or more additional regions. In someembodiments, the one or more additional regions comprise a first set ofone or more additional regions and a second set of one or moreadditional regions. For example, the one or more additional regions arenot necessarily continuous, as illustrated by the first set of one ormore additional regions 306 and the second set of one or more additionalregions 806 of FIG. 9. At 1112, at least one of a first metal line, asecond metal line, or a via is formed. For example, in some embodiments,the method 1100 comprises at least one of forming a first metal line byfilling the first trench with metal, forming a second metal line byfilling the second trench with metal, or forming a via by filling thecontact space with metal. At 1114, a second ESL is formed. For example,the second ESL is formed over at least one of the first metal line, thesecond metal line, the via, or the LK dielectric region. At 1116, aportion of the second ESL is removed. In some embodiments, the portionof the second ESL that is removed is located over at least one of thefirst metal line or the second metal line or between the first metalline and the second metal line. At 1118, a gap is formed. For example,the gap is formed by removing at least one of at least a portion of theoxide region between the first metal line and the second metal line orat least a portion of the LK dielectric region between the first metalline and the second metal line. At 1120, an ESL seal region is formed.For example, the ESL seal region is formed over at least one of thesecond ESL, the first metal line, the second metal line, the via, or thegap.

One or more techniques or systems for forming a damascene gap structureare provided herein. Generally, a damascene gap structure comprises agap between a first region and a second region. For example, the gap isformed within a low-k (LK) dielectric region of the damascene gapstructure. In some embodiments, the gap is formed by removing LKdielectric material above a first etch stop layer (ESL). In someembodiments, removal of the LK dielectric material is facilitated by anoxide region above the first ESL and below the LK dielectric region. Forexample, the oxide region enables a first etch rate associated with abottom of the LK dielectric region, such as a bottom etch rate, to be atleast one of uniform or similar to a second etch rate associated with awall of the LK dielectric region, such as a wall etch rate. In this way,the oxide region below the LK dielectric region facilitates removal ofLK material from the LK dielectric region, thus mitigating LK residueduring damascene gap structure formation. Additionally, in someembodiments, the first ESL provides structural support for a metal lineon a side or a wall of the gap. In some embodiments, the first ESLmitigates dislocation of the metal line, for example.

According to some aspects, a damascene gap structure is provided,comprising a first etch stop layer (ESL), an oxide region above thefirst ESL, a low-k (LK) dielectric region above the oxide region, asecond ESL above the LK dielectric region, and a first ESL seal regionabove the second ESL. Additionally, the damascene gap structurecomprises a second ESL seal region flush with the second ESL and a gapbetween the first ESL and the second ESL seal region. In someembodiments, the damascene gap structure comprises a first metal line ona first side of the gap. For example, the first metal line is formedunder at least one of the second ESL or the second ESL seal region.Additionally, the first metal line is formed through the first ESL. Insome embodiments, the damascene gap structure comprises a second metalline on a second side of the gap. For example, the second metal line isformed under at least one of the second ESL or the second ESL sealregion. Additionally, the second metal line formed through the firstESL.

According to some aspects, a method for forming a damascene gapstructure is provided, comprising forming a first etch stop layer (ESL),forming an oxide region above the first ESL, and forming a low-k (LK)dielectric region above the oxide region. Additionally, the methodcomprises forming a first metal line through at least one of the firstESL, the oxide region, or the LK dielectric region and forming a secondmetal line through at least one of the first ESL, the oxide region, orthe LK dielectric region. In some embodiments, the method comprisesforming a second ESL over at least one of the first metal line, thesecond metal line, or the LK dielectric region. In some embodiments, themethod comprises removing at least a portion of the second ESL at leastone of over at least one of the first metal line or the second metalline or between the first metal line and the second metal line. In someembodiments, the method comprises forming a gap by removing at least oneof at least a portion of the oxide region between the first metal lineand the second metal line or at least a portion of the LK dielectricregion between the first metal line and the second metal line. In someembodiments, the method comprises forming an ESL seal region over atleast one of the second ESL, the first metal line, the second metalline, or the gap.

According to some aspects, a method for forming a damascene gapstructure is provided, comprising forming a first etch stop layer (ESL),forming an oxide region above the first ESL, forming a low-k (LK)dielectric region above the oxide region, forming a hard mask (HM)region above the LK dielectric region, and patterning the HM region. Insome embodiments, the method comprises etching at least one of a firsttrench, a second trench, or a contact space based on the patterned HMregion. For example, the first trench is formed through at least one ofthe first ESL, the oxide region, or the LK dielectric region. Forexample, the second trench is formed through at least one of the firstESL, the oxide region, or the LK dielectric region. For example, thecontact space formed through at least one of the first ESL, the oxideregion, the LK dielectric region, or one or more additional regions. Insome embodiments, the method comprises forming a first metal line byfilling the first trench with metal, forming a second metal line byfilling the second trench with metal, and forming a via by filling thecontact space with metal. Additionally, the method comprises forming asecond ESL over at least one of the first metal line, the second metalline, the via, or the LK dielectric region. In some embodiments, themethod comprises removing at least a portion of the second ESL at leastone of over at least one of the first metal line or the second metalline or between the first metal line and the second metal line. In someembodiments, the method comprises forming a gap by removing at least oneof at least a portion of the oxide region between the first metal lineand the second metal line or at least a portion of the LK dielectricregion between the first metal line and the second metal line. In someembodiments, the method comprises forming an ESL seal region over atleast one of the second ESL, the first metal line, the second metalline, the via, or the gap.

Although the subject matter has been described in language specific tostructural features or methodological acts, it is to be understood thatthe subject matter of the appended claims is not necessarily limited tothe specific features or acts described above. Rather, the specificfeatures and acts described above are disclosed as example forms ofimplementing the claims.

Various operations of embodiments are provided herein. The order inwhich some or all of the operations are described should not beconstrued as to imply that these operations are necessarily orderdependent. Alternative ordering will be appreciated based on thisdescription. Further, it will be understood that not all operations arenecessarily present in each embodiment provided herein.

It will be appreciated that layers, features, elements, such as thefirst etch stop layer (ESL), oxide region, low-k (LK) dielectric region,second ESL, ESL seal region, gap, first metal line, second metal line,third metal line, via, contact space, hard mask (HM), etc. depictedherein are illustrated with particular dimensions relative to oneanother, such as structural dimensions or orientations, for example, forpurposes of simplicity and ease of understanding and that actualdimensions of the same differ substantially from that illustratedherein, in some embodiments. Additionally, a variety of techniques existfor forming the layers features, elements, etc. mentioned herein, suchas etching techniques, implanting techniques, doping techniques, spin-ontechniques, sputtering techniques such as magnetron or ion beamsputtering, growth techniques, such as thermal growth or depositiontechniques such as chemical vapor deposition (CVD), for example.

Moreover, “exemplary” is used herein to mean serving as an example,instance, illustration, etc., and not necessarily as advantageous. Asused in this application, “or” is intended to mean an inclusive “or”rather than an exclusive “or”. In addition, “a” and “an” as used in thisapplication are generally construed to mean “one or more” unlessspecified otherwise or clear from context to be directed to a singularform. Also, at least one of A and B and/or the like generally means A orB or both A and B. Furthermore, to the extent that “includes”, “having”,“has”, “with”, or variants thereof are used in either the detaileddescription or the claims, such terms are intended to be inclusive in amanner similar to the term “comprising”.

Also, although the disclosure has been shown and described with respectto one or more implementations, equivalent alterations and modificationswill occur based on a reading and understanding of this specificationand the annexed drawings. The disclosure includes all such modificationsand alterations and is limited only by the scope of the followingclaims.

What is claimed is:
 1. A method for forming a semiconductor structure,comprising: forming a first etch stop layer (ESL); forming an oxideregion above the first ESL; forming a low-k (LK) dielectric region abovethe oxide region; forming a first metal line through at least one of thefirst ESL, the oxide region, or the LK dielectric region; forming asecond metal line through at least one of the first ESL, the oxideregion, or the LK dielectric region; forming a second ESL over at leastone of the first metal line, the second metal line, or the LK dielectricregion; removing at least a portion of the second ESL at least one of:over at least one of the first metal line or the second metal line; orbetween the first metal line and the second metal line; forming a gap byremoving at least one of: at least a portion of the oxide region betweenthe first metal line and the second metal line; or at least a portion ofthe LK dielectric region between the first metal line and the secondmetal line; and forming an ESL seal region over at least one of thesecond ESL, the first metal line, the second metal line, or the gap. 2.The method of claim 1, forming the first metal line comprisingperforming chemical-mechanical planarization (CMP) on at least one ofthe LK dielectric region or the first metal line.
 3. The method of claim1, forming the second metal line comprising performingchemical-mechanical planarization (CMP) on at least one of the LKdielectric region or the second metal line.
 4. The method of claim 1,comprising removing at least a portion of the second ESL based on photoresist (PR) patterning.
 5. The method of claim 1, comprising forming thefirst metal line of copper.
 6. The method of claim 1, comprising formingthe second metal line of copper.
 7. The method of claim 1, comprisingforming the first ESL of a dielectric material.
 8. The method of claim1, comprising forming the second ESL of a dielectric material.
 9. Themethod of claim 1, comprising forming a third metal line between thefirst metal line and the second metal line.
 10. A method for forming asemiconductor structure, comprising: forming a first etch stop layer(ESL); forming an oxide region above the first ESL; forming a low-k (LK)dielectric region above the oxide region; forming a hard mask (HM)region above the LK dielectric region; patterning the HM region; etchingat least one of a first trench, a second trench, or a contact spacebased on the patterned HM region: the first trench formed through atleast one of the first ESL, the oxide region, or the LK dielectricregion; the second trench formed through at least one of the first ESL,the oxide region, or the LK dielectric region; or the contact spaceformed through at least one of the first ESL, the oxide region, the LKdielectric region, or one or more additional regions; forming a firstmetal line by filling the first trench with metal; forming a secondmetal line by filling the second trench with metal; forming a via byfilling the contact space with metal; forming a second ESL over at leastone of the first metal line, the second metal line, the via, or the LKdielectric region; removing at least a portion of the second ESL atleast one of: over at least one of the first metal line or the secondmetal line; or between the first metal line and the second metal line;forming a gap by removing at least one of: at least a portion of theoxide region between the first metal line and the second metal line; orat least a portion of the LK dielectric region between the first metalline and the second metal line; and forming an ESL seal region over atleast one of the second ESL, the first metal line, the second metalline, the via, or the gap.
 11. The method of claim 10, comprisingremoving the patterned HM region prior to the forming a second ESL. 12.The method of claim 11, the removing the patterned HM region comprisingplanarizing a top surface of the semiconductor structure.
 13. The methodof claim 10, the forming an ESL seal region comprising forming the ESLseal region to contact the first metal line and the second metal line.14. The method of claim 10, comprising: removing a portion of the ESLseal region over the via; and removing a second portion of the secondESL over the via to form a second contact space over the via.
 15. Themethod of claim 14, comprising filling the second contact space withmetal.
 16. The method of claim 14, the removing a second portion of thesecond ESL comprising removing the second portion of the second ESLafter forming the ESL seal region.
 17. A method for forming asemiconductor structure, comprising: forming a first etch stop layer(ESL); forming an oxide region above the first ESL; forming a dielectricregion above the oxide region; etching the first ESL, the oxide region,and the dielectric region to form a first trench and a second trench;forming a first metal line in the first trench; forming a second metalline in the second trench; forming a second ESL over the first metalline, the second metal line, and the dielectric region; removing aportion of the second ESL between the first metal line and the secondmetal line; removing a portion of the oxide region and a portion of thedielectric region between the first metal line and the second metal lineto form a gap; and forming an ESL seal region over the first metal line,the second metal line, and the gap.
 18. The method of claim 17, theremoving a portion of the second ESL comprising exposing at least aportion of a top surface of the first metal line and a portion of a topsurface of the second metal line.
 19. The method of claim 18, theforming an ESL seal region comprising forming the ESL seal region tocontact at least a portion of a top surface of the second ESL, theportion of the top surface of the first metal line, and the portion ofthe top surface of the second metal line.
 20. The method of claim 17,comprising: removing a portion of the ESL seal region; removing a secondportion of the second ESL to form a contact space; and filling thecontact space with metal.